Modeling of correlated noise in RF bipolar devices

An RF noise model is proposed for high frequency bipolar transistors considering partial correlation of shot and thermal noise sources. For frequencies f/spl ges/f/sub T///spl radic//spl beta//sub 0/ expressions are derived for input noise voltage, noise current and correlation impedance. The model is verified with data obtained from a 0.5 /spl mu/m BiCMOS technology developed for RF wireless applications.