Impact of Packaging on the Short-Circuits Capability of SiC MOSFETs

The main aim of this work is to evaluate the robustness to short circuits of SiC MOSFETs featuring different commercially available packages. During these tests, the dice of the power devices are subjected to significant temperature gradients because of the high power dissipation and thus, as a result, to considerable thermomechanical stresses. Experimental investigation has been performed by considering discrete devices featuring three or four leads packages, where their housing has been filled with epoxy resin and for the purpose of this study also with silicone-gel, as these insulation solutions, adopted also for power module, feature different thermo-mechanical properties, consequently affecting short-circuit performance.