A method for manufacturing a nitride semiconductor device and nitride semiconductor device

There is provided a method for manufacturing a nitride semiconductor device (100), comprising the steps of: - providing a growth substrate (1) having a growth surface (10), which is formed by a flat surface (11) having a plurality three-dimensional molded surface structures (12) on the flat surface (11), - growing a nitride-based semiconductor layer sequence (30) on the growth surface (10), wherein the growth selectively on a Anwachsflache (13) of growth substrate begins, and wherein the Anwachsflache (13) is less than 45% of the growth surface (10). Furthermore, a producible with the method nitride Hableiterbauelement (100) will be described.