High‐frequency modulation of AlGaAs/GaAs lasers grown on Si substrate by molecular beam epitaxy

We report on the frequency response of quantum well lasers on Si substrates grown by molecular beam epitaxy. Ridge waveguide lasers of 10 μm×380 μm having threshold currents as low as 40 mA were used in this study. Measurements were performed up to a frequency of 4.5 GHz with a resultant modulation corner frequency of 2.5 GHz when the laser was operated about 20% above the threshold.