Mass Production of Sensors Grown by Molecular Beam Epitaxy

Abstract We have discussed mass production of magnetic sensors and infrared sensors using narrow-bandgap compound semiconductor materials such as InSb, InAs, and related antimonides grown by molecular beam epitaxy (MBE). We showed that MBE system is suitable for the mass production of these sensors. The Hall sensors produced by MBE are widely used for various electric apparatuses, mobile phones, digital cameras, and automobile applications. Moreover, we have succeeded in developing a miniaturized InSb photovoltaic infrared sensor operating at room temperature. The InSb photovoltaic infrared sensor grown by MBE was encapsulated in a very small plastic package. Our InSb photovoltaic infrared sensor, with its high sensitivity, ease of manufacture and millimeter dimensions, is a promising device for both noncontact thermometry and human body detection in portable device applications. In addition, we demonstrated the four-pixel InSb IR sensors in one-chip hybridized with an integrated circuit to compensate temperature dependence and amplifier. It has been commercialized to use for human body detection. Finally, we also report a nondispersive infrared gas sensor application using the InSb IR sensors.