Characterization of the switching parameters in the dual-channel double Heterostructure Optoelectronic switch

A new three-terminal switching device utilizing two modulation-doped heterointerfaces to achieve electron and hole symmetries is investigated. The switching voltage is investigated by varying the critical barrier-doping parameters and capacitor spacings over a range of practical values. The experimental dependence upon current injection into the electron field-effect channel is characterized. Both two- and three-terminal device measurements are compared with a recent theoretical model, and show excellent correlation.