Effects of cleaning and postoxidation annealing on thin oxides

The aim of this work is to study the influence on the oxide quality of various cleaning procedures performed before growing a thin dielectric in a steam ambient. Different measurement methods were applied showing the improved effectiveness of constant electric field stress versus constant current density stress method to detect a cleaning, which causes particle problems on the wafer. The effect evaluation of a postoxidation treatment on different oxide thickness was also carried out.