Effects of Zn doping concentration on resistive switching characteristics in Ag /La1−xZnxMnO3/p+-Si devices

Ag /La1−xZnxMnO\(_{\mathbf {3}}\boldsymbol {/}\textit {p}^{\boldsymbol {+}}\)-Si devices with different Zn doping contents were fabricated through sol–gel method. The effects of Zn doping concentration on the microstructure of La1−xZnxMnO3 films, as well as on the resistance switching behaviour and endurance characteristics of Ag /La1−xZnxMnO\(_{\mathbf {3}}\boldsymbol {/}\textit {p}^{\boldsymbol {+}}\)-Si were investigated. After annealing at 600∘C for 1 h, the La1−xZnxMnO3 (x= 0.1, 0.2, 0.3, 0.4, 0.5) are amorphous and have bipolar resistance characteristics, with RHRS/RLRS ratios >103. However, the endurance characteristics show considerable differences; x=0.3 shows the best endurance characteristics in more than 1000 switching cycles. The conduction mechanism of the Ag /La1−xZnxMnO\(_{\mathbf {3}}\boldsymbol {/}\textit {p}^{\boldsymbol {+}}\)-Si is the Schottky emission mode at high resistance state. However, the conduction mechanism at low resistance state varies with Zn doping concentration. The dominant mechanism at x=0.1 is filamentary conduction mechanism, whereas that at x≥0.2 is space-charge-limited current conduction.