Photoluminescence study of Sb-doped ZnO films deposited by a closed tube CVT technique

Abstract Sb-doped ZnO film was obtained by CVT technique in a closed tube, and the temperature dependence of its photoluminescence spectrum was also investigated. The Sb-related photoluminescence peaks were observed. The peaks occurred at 3.352, 3.312, 3.240 and 3.168 eV were respectively assigned to the neutral acceptor-bound excition, free electron to acceptor transitions, and the first- and second- longitudinal optical phonon replicas emissions. The acceptor binding energy was determined to be 125 meV, aided by free electron to acceptor transition.