Old Web
English
Sign In
Acemap
>
Paper
>
Investigation of conduction variability in MOVPE In1-xGaxAs channels for vertical NAND memory
Investigation of conduction variability in MOVPE In1-xGaxAs channels for vertical NAND memory
2016
E. Capogreco
A. Arreghini
J. G. Lisoni
Bernardette Kunert
Weiming Guo
Kristin De Meyer
Geert Van den bosch
Jan Van Houdt
A. Furnemont
Keywords:
NAND gate
Metalorganic vapour phase epitaxy
Electronic engineering
Thermal conduction
Communication channel
Materials science
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]