Resistive device of two-dimensional nanosheet-layer MoS2 vertical structure

Disclosed is a resistive device of a two-dimensional nanosheet-layer MoS2 vertical structure. The resistive device is characterized in that the vertical structure is composed of an oxidized wafer, a Ti adhesion layer 2-5 nm in thickness, a lower electrode 50-200 nm in thickness, a resistive layer, an upper electrode 50-200 nm in thickness and an upper electrode SiO2 protecting layer 5-10 nm in thickness, wherein the resistive layer is two-dimensional nanosheet-layer MoS2 of a 'sandwich' laminated structure, and the two-dimensional nanosheet-layer MoS2 is 0.65-10 nm in thickness. The resistive device has the advantages that the two-dimensional nanosheet-layer MoS2 acts as the resistive layer of the resistive device, so that a dielectric layer material system in a resistive random access memory is expanded and application blank of the two-dimensional nanosheet-layer MoS2 in the resistive random access memory is filled; the resistive device of the pure vertical laminated structure is simple to manufacture, low in cost and easy to integrate.