A pattern forming method using the near-infrared absorbing film compositions and the composition for lithography applications

Disclosed is near infrared (NIR) film compositions for use in vertical alignment and correction in patterning of integrated semiconductor wafer, and to a patterning process using the composition. A NIR absorbing film composition comprises a NIR absorbing dye having a Pochimechin cation and a crosslinkable anion, a crosslinkable polymer, a crosslinking agent. Patterning method, by detecting the near infrared emission reflected from a substrate comprising a NIR absorbing layer formed from a NIR absorbing film composition under the photoresist layer and the photoresist layer, the focal plane position of the photoresist layer including that to focus perform alignment. NIR absorbing film compositions and patterning methods are particularly useful in forming a pattern of material on a semiconductor substrate having a complex embedding topography.