Comparative evaluation of implantation damage produced by N and P ions in 6H-SiC

The result of N, P and P + N implantations performed at room temperature in 6H-SiC has been comparatively evaluated. Using micro-Raman spectroscopy we focus on the change in bulk LO-phonon intensity as a function of ions and ion-fluency. We find that the effective damage cross section for phosphorus is about 30% larger than the one for nitrogen. After annealing, good recovery is found but atomic force microscopy still evidences increased surface roughness.