Studies on the n‐GaAs Photoanode in Aqueous Electrolytes. 3. Recombination Resistance

The resistive part of the additional impedance, caused by illumination of the n-GaAs/electrolyte interface, has been studied both experimentally and theoretically. The dependence of this resistive part on the electrode potential, the light intensity and the measuring frequency is interpreted on the basis of a model in which it is assumed that surface recombination is involved. A quantitative expression for the recently introduced concept of recombination resistance is derived.