High efficiency and high density rectifier with GaN HEMT

Efficiency and power density are the two most important index of the telecom rectifier development. During recent years, the efficiency of the telecom rectifier is pushed from 92% to 96% and now 98%, this paper however explores the design considerations of super high density telecom rectifiers in concert with high efficiency requirements (96%). Specifically, the design considerations of a high switching frequency (1MHz) and high efficiency interleaving totem pole PFC stage with DCM boundary control. A high resonant frequency (1MHz), PCB winding based LLC DCDC stage is explained. The different type wide band device 650V GaN HEMT is used for PFC stage and D2D stage. Experimental results are presented to validate the design concept