language-icon Old Web
English
Sign In
Acemap > Paper > Fabrication of High-Mobility Si0.7Ge0.3 Channel FinFET for Optimization of Device Electrical Performance

Fabrication of High-Mobility Si0.7Ge0.3 Channel FinFET for Optimization of Device Electrical Performance

2021 
Keywords:
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    11
    References
    1
    Citations
    NaN
    KQI
    []
    logo
    • CCF Conference Analysis
    • Map Galaxy
    • What's New
    © Copyright 2015-2020 Acemap, Inc. Shanghai Jiao Tong University.