Preparation technology for low-cost large-area nanoimprinting template with photonic crystal structure

2008 
The invention discloses preparation technology for a low-cost large-area nanoimprinting template with a photonic crystal structure, which relates to a structure and preparation technology of the template. The structure of the template is a periodic nano-convex photonic crystal structure which is two-dimensionally and alternately arranged. The preparation technology for the template comprises the steps of: (1) coating a layer of metal chromium and an electron beam optical resist on the surface of quartz, and utilizing electron beam exposure technology and development technology to form a micron-sized round hole-shaped photonic crystal structure which is two-dimensionally and alternately arranged on the surface of the resist, wherein the duty ratio is 1: 1; (2) utilizing a reactive particleetching process to transfer a pattern on the surface of the resist to a chromium layer, taking the chromium layer as a barrier layer to transfer the pattern to the surface of a quartz substrate, and then removing the resist on the surface of the quartz, wherein a structure transferred to the surface of quartz glass is the micron-sized round hole-shaped photonic crystal structure which is two-dimensionally and alternately arranged (a female template); and (3) configuring a BOE etching solution (40 percent NH4F: 49 percent HF is equal to 5: 1), placing the female quartz template into the BOE etching solution, controlling the temperature to be between 20 and 25 DEG C, performing ultrasonic treatment for 5 to 8 minutes, and then converting the micron-sized round hole-shaped photonic crystal periodic structure (the female template) which is two-dimensionally and alternately arranged on the surface of the quartz glass to a nano-convex photonic crystal periodic structure (a male template) which is two-dimensionally and alternately arranged, wherein the dimension of convexity is between 90 and 300nm and is adjustable, the depth is controlled to be between 100 and 200nm.
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