Calculation of capacitance‐voltage characteristics of hydrogenated amorphous silicon Schottky diodes

By adopting a new boundary condition appropriate to hydrogenated amorphous silicon diodes, and using the nonequilibrium Fermi–Dirac statistics, we predict a low‐frequency capacitance‐voltage relation which is quite different from that obtained by previous calculations in the literature, while in good agreement with more recent experimental results. The physical reasons for the differences are discussed.