Interfacial versus filamentary resistive switching in TiO2 and HfO2 devices

In this paper, the authors focus on two well-identified switching mechanisms, namely, interfacial (or homogeneous) switching and filamentary switching. These switching mechanisms have been reported in various devices, but a broader analysis remains to be conducted. By comparing the performances of TiO2- and HfO2-based resistive switching devices in terms of variability, retention, controllability, and switching energy, the authors discuss how oxygen vacancies organization can determine a general set of properties that will define the range of applications that could be envision for each material/device technology.