The use of ALD layers for hermetic encapsulation in the development of a flexible implantable micro electrode for neural recording and stimulation

The use of electronic microsystems as medical implants gains interests due to the combination of superior device functionality with extreme miniaturization. Electronic devices are not biocompatible and will suffer from corrosion, hence a very good hermetic device encapsulation is of utmost importance. The hermetic sealing of implantable electronics requires extremely good bi-directional barrier properties against diffusion of water, ions and gases. Moreover, extremely long biostability against body fluids and biomolecules is an important requirement for the barrier materials. In this work, an ALD multilayer of AlOx and HfOx in combination with flexible polyimide is used as a flexible hermetic encapsulation of an electronic CMOS chip which serves as an implantable probe (so called hd TIME (active high-density transverse intrafascicular microelectrode) probe) for neural recording and stimulation [1]. The main part consists of a 35μm thin CMOS chips with electrodes on top encapsulated with alternating layers of spin coated polyimide (PI2611) and biocompatible ALD layers. The total encapsulation is developed to provide excellent barrier properties. Each ALD stack (ALD-3) consists of AlOx (20 nm) capped on both sides with HfOx (8 nm) to avoid hydrolysis of AlOx. The ALD deposition temperature is 250°C. Special attention is payed to the adhesion of the ALD layers toward polyimide and vice versa. 3 to 4 PI/ALD-3 dyads are used for the total encapsulation, since long term implantation of the medical device is envisaged. Testing however is done using only a part of the total encapsulation, in order to enable to learn about the barrier properties in a reasonnable timeframe. The WVTR of a PI/ALD-3/PI film reached a value of 2.1 10-5 g/m2day (38°C and 100% RH), the total encapsulation with 3 to 4 dyads will lead to WVTR’s in the order of 10-6g/m2day. The same PI/ALD-3/PI film has been deposited on structured copper meanders and is exposed to PBS at 60°C for 3.5 years (equivalent to 17.5 years at 37°C) [2]. Up till now, no change in Cu resistivity has been observed proving the excellent barrier properties of the PI/ALD-3/PI film. [1] Rik Verplancke et al., 2020 J. Micromech. Microeng., 30, 015010 [2] Changzheng Li et al. 2019 Coatings, 9, 579