Optoelectronic component, process for manufacturing an optoelectronic component and method for editing a carrier

According to various embodiments, an optoelectronic component (100) may be provided, wherein the optoelectronic component (100) comprising: an electrode structure (104) disposed above and / or in a carrier (102), and a grating structure (106) via the electrode structure (104) is arranged wherein the grating structure (106) at least a first region (106a) and a second region (106b), wherein the first region (106a) comprising the lattice structure (106) of amorphous silicon and wherein the second region (106b) has the grating structure (106) comprises a material having a refractive index of the amorphous silicon front different refractive index.