Photoluminescence of semimagnetic semiconductor Hg1-xMnxTe

Abstract Photoluminescence (PL) of Hg 1− x Mn x Te for 0.12 ⩽ x ⩽ 0.13 corresponding E 0 ≃ 0.27 eV was measured at 4.2 K vs magnetic field up to 8.3 T. The spectral dependence of PL shows two maxima connected with band-band and band-acceptor recombination processes. Magnetic fields cause the shift of both maxima to lower energies. The intensity of the PL increases over 50 times for band-acceptor transitions as function of magnetic field, reaches a maximum at 6T than decreases. The results are explained on the base of band structure and acceptor behaviour in magnetic field characteristic for semimagnetic semiconductors.