Photoelectron holography of Si(100)‐[2×1] and other surface and thin‐film structures

Direct imaging of near‐neighbor atomic structure in Si(100) is demonstrated using photoelectron holography with the Si 2s core level. Photoelectron diffraction studies of the initial stages of epitaxy of copper on Si(100)‐[2×1] surfaces show that room‐temperature deposition does not result in ordered films. Examples of quantitative photoelectron diffraction studies of epitaxial copper films show that bond‐length accuracies of 0.05 A are possible by fitting techniques.