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High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate
High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate
2011
Takeshi Yamanaka
Keisuke Yamamoto
Keita Sakamoto
Haigui Yang
Dong Wang
Hiroshi Nakashima
Keywords:
Electron mobility
Metal gate
Atomic physics
Nanotechnology
MOSFET
Tin
Materials science
high electron
Optoelectronics
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