EFFECT OF STRESS ON OPTICAL AND ESR LINES IN CVD DIAMOND

Correlation between the shape of Raman, photoluminescence (PL) and Electron Spin Resonance (ESR) signals in CVD diamond films was examined for both undoped and nitrogen-doped films. No correlation was observed between the shift of the diamond Raman line and its linewidth, even for the films produced under essentially the same growth conditions. It was found that the increase in the width of the diamond Raman peak interrelates with the broadening of zero-phonon PL lines and the changes in the structure of the ESR signal from the substitutional nitrogen (P1) center. Observed changes in the ESR spectra are interpreted in terms of reduction of the symmetry of the P1 center induced by internal stress.