Old Web
English
Sign In
Acemap
>
Paper
>
Effect of STI Stress Enhanced Boron Diffusion on Leakage and Vcc_min of Sub-65nm node Low-Power SRAM
Effect of STI Stress Enhanced Boron Diffusion on Leakage and Vcc_min of Sub-65nm node Low-Power SRAM
2007
Tung-Hsing Lee
Yean-Kuen Fang
Tony Lin
Elrick Hsu
Tzermin Sheng
Chien-Li Kuo
Osbert Cheng
S. C. Chien
Keywords:
Leakage (electronics)
Electronic engineering
Boron
Static random-access memory
Materials science
boron diffusion
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]