Buried Oxide Layers Formed by Oxygen Implantation for Potential Use in Dielectrically Isolated ICs

The aim is to produce a buried oxide layer by heavy dose implantation (> 1017vm-2) into 111 Si substrate for use in dielectrically isolated LSI circuits as an alternative to SOS ICs. IZUMI et al.{1} made CMOS devices using this technique and HAYASHI et al.{2} carried out some structural analysis using AES, TEM and XPS techniques. We have extended their work of composition and structural analysis in relating it to practical methodology and assessment procedures.