Formation of buried high-resistivity layers in InP crystals by MeV nitrogen ion implantation

We have studied the formation of buried high-resistivity layers in InP single crystals by MeV ion implantation. It was found that the implantation of MeV nitrogen ions plus subsequent thermal annealing can generate a deep burried layer with resistivity up to about 10^6 Ω cm in n-type InP crystals. This layer has exhibited implant dose dependence, high thermal stability and reproducibility over a dose range of 5 × 10^(14) − 1 × 10^(16) cm^(−2). The mechanism of insulating layer generation by implantation, based on cross sectional transmission electron microscopy (XTEM) and I–V curve measurements, as well as the application of this technique in device fabrication, will be discussed.