Old Web
English
Sign In
Acemap
>
Paper
>
9‐4: Fabrication of Oxide‐Semiconductor FETs with Submicron Channel Length
9‐4: Fabrication of Oxide‐Semiconductor FETs with Submicron Channel Length
2021
Yasuharu Hosaka
Nakazawa Yasutaka
Takashi Shiraishi
Rai Sato
Kenichi Okazaki
Shunpei Yamazaki
Keywords:
Fabrication
Materials science
Communication channel
oxide semiconductor
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
11
References
0
Citations
NaN
KQI
[]