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Ultra-low energy ion implantation of Si and Ge into HfO2-based layers for non volatile memory applications
Ultra-low energy ion implantation of Si and Ge into HfO2-based layers for non volatile memory applications
2009
Pierre-Eugène Coulon
Bhabani Sahu
M. Carrada
S. Schamm
G. Ben Assayag
B. Pecassou
Abdelilah Slaoui
S. Lhostis
C. Bonafos
Keywords:
Materials science
Ion implantation
Non-volatile memory
Analytical chemistry
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