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ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08µm 2 SRAM cell
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08µm 2 SRAM cell
2011
Cheng
Khakifirooz
Kulkarni
Ponoth
haran
Kumar
Adam
Reznícek
Loubet
He
Kuss
Wang
Levin
Monsieur
Liu
Sreenivasan
Cai
Kimball
Mehta
Luning
Zhu
Yamamoto
Bryant
Lin
Naczas
Jagannathan
Allegret-Maret
Dube
Kanakasabapathy
Schmitz
Inada
Seo
Raymond
Zhang
Yagishita
Demarest
Li
Hopstaken
Berliner
Upham
Johnson
Holmes
Standaert
Smalley
Zamdmer
Ren.
Wu
Bu
Paruchuri
Sadana
Narayanan
Haensch
ONeill
Hook
Khare
doris
Keywords:
Optoelectronics
System on a chip
gate length
CMOS
Materials science
sram cell
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