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Cross-point phase change memory with 4F 2 cell size driven by low-contact-resistivity poly-Si diode
Cross-point phase change memory with 4F 2 cell size driven by low-contact-resistivity poly-Si diode
2009
Sasago
Kinoshita
Morikawa
Kurotsuchi
Hanzawa
Mine
Shima.
Fujisaki
Kume
Moriya
Takaura
Torii
Keywords:
cross point
Optoelectronics
Electrode
Phase-change memory
Electrical resistivity and conductivity
Silicon
Titanium
Diode
Tin
Materials science
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