8-T ULV SRAM macro in 28nm FDSOI with 7.4 pW/bit retention power and back-biased-scalable speed/energy trade-off

In this paper, we propose an ultra-low-voltage SRAM macro in 28nm FDSOI based on an 8-T ULP bitcell. Data retention in the proposed bitcell is obtained with two CMOS negative-differential resistance structures, which allow for using only low-V t transistors for density and speed without prohibitive leakage. The bitcell was sized to reach low failure rate for 32-kB macro with a gradient-based importance sampling methodology. Thanks to the exclusive use of low-Vt transistors, adaptive back biasing allows for compensating PVT variations as well as scaling the power/performance trade-off. At 0.55V, the proposed SRAM can operate at up to 200 MHz and reaches an average access energy of 20.4 fJ/bit. In sleep mode with data retention, the leakage power goes down to 7.4 pW/bit.