Phase Change Memory with Chalcogenide Selector (PCMS): Characteristic Behaviors, Physical Models and Key Material Properties
2010
We present a novel scalable and stackable nonvolatile solid state memory. Each cell consists of a storage element, based on phase change memory (PCM) element, and an integrated selector, using an Ovonic threshold switch (OTS). The cell is implemented to enable a true cross-point array. The main device characteristics and behaviors, corresponding physical processes in different operation modes, and key material properties are discussed.
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