Semiconductor substrate having gettering, production process and use

A process for producing a semiconductor epitaxial substrate comprising the following steps: - performing a Vorepitaxie-cleaning step of a semiconductor substrate blank, - forming a first epitaxial layer on the semiconductor substrate blank using a silicon source, - growing a getter layer on the first epitaxial layer by chemical vapor deposition or molecular beam epitaxy using a silicon source, wherein the getter layer of carbon (C), germanium (Ge), tin (Sn), lead (Pb), or any combination of these elements containing, - forming a second epitaxial layer on the getter layer using a silicon source and - performing a heat treatment of the semiconductor substrate after the formation of the second epitaxial layer.