GO and RGO based FETs fabricated with Langmuir-Blodgett grown monolayers

Graphene oxide (GO) monolayers were transferred onto SiO2/Si substrates by Langmuir-Blodgett (LB) technique and were converted to reduced graphene oxide (RGO) by exposure to hydrazine vapors followed by various durations of heat treatment at 400 °C in Ar atmosphere. Bottom gated FETs were fabricated with LB grown monolayers before and after reduction and were electrically characterized. The conductivity of RGO monolayers has been found to be in the range of 3 to 5 Scm−1. The RGO devices showed p-type behavior with a hole mobility of 0.07cm2/Vs and Ion/Ioff ratio of 2.