A novel silicon MIS photodetector using molecular semiconductor as intermediate oxide layer

In this paper, we describe new photoelectric properties of metal-molecular semiconductor-semiconductor sensors that have been fabricated by deposition of metal-phthalocyanine (MePc) films on a silicon substrate. In these sensors the MePc film serves as a leaky intermediate oxide. The photoelectric properties of sensors have been investigated under DC and a trapezoidal voltage bias applied to the sensor. The photocurrent multiplication properties of M-MePc-semiconductor optical sensors obtained at different voltage bias modes are discussed.