High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

The characteristics of available temperature sensors based on single crystals of silicon are analyzed and the causes of limitation of the upper range limit of the temperature are determined. To increase the sensitivity, expansion of the temperature range, and achievement of the linear output characteristic of the temperature sensor, it is proposed that the step-by-step implantation of P+ and B+ ions, with a gradual decrease of energy, be carried out in multiple directions of the Si (111) crystal with the subsequent brief thermal annealing, laser annealing, and annealing by infrared (IR) radiation, after each step of ion implantation. The profiles of the distribution of P and B atoms implanted in Si with a gradual decrease in the energy are studied. The influence of subsequent thermal annealing and IR radiation on the profiles of the distribution of atoms and characteristics of the temperature sensor is investigated. A p–i–n-diode with a high concentration of electrically active atoms (NP = 1021 cm–3, NB = 2 × 1021 cm–3), with an almost step distribution of P and B atoms and a sharp interface of the p–i and i–n-regions, with high thermal sensitivity (2.3 mV/K) within a wide temperature range of 20–550 K, is manufactured in this work.