Carbazole composition comprising a novolac resin containing a hydroxyl group is formed resist underlayer film

Object of the present invention is to provide a composition for a lithography process for manufacturing a semiconductor device includes a heat resistance of the resist underlayer film is formed. As a method for solving problems according to the present invention is a resist underlayer film forming composition comprising a polymer comprising a unit represented by formula (1) and a unit structure represented by Formula (2) structure, said polymer molar ratio of 3 to 97: 3 ratio of ~ 97 comprising formula (1) and structural units of formula (2) units in the configuration shown in FIG. The present invention relates to a method of manufacturing a semiconductor device, comprising the steps of: on a semiconductor substrate by a step of forming an underlayer film forming composition of the resist underlayer film; forming a hard mask on the underlayer film; then a resist film is formed on the hard mask; step of forming a patterned resist film by irradiation with light or an electron beam developing; in the pattern of the resist film on the hard mask a step of etching; step of etching according to the pattern of the hard mask underlayer film; and a step of processing the semiconductor substrate according to the patterned underlayer film.