Determination of the heavy-metal ion-dose after implantation in silicon-wafers by total reflection X-ray fluorescence analysis

Abstract The dose of Cr-, Co- and Ni-ions, implanted into Si-wafers with an energy of 300 keV for the purpose of calibration, was determined by total reflection X-ray fluoresence (TXRF). Prior to the determination of the ions, the samples were dissolved and the matrix was evaporated as SiF 4 . Dose values between 5 × 10 15 and 1.6 × 10 17 ions/cm 2 were measured. The accuracy of TXRF-measurements was checked by two reliable methods, flame atomic absorption spectrometry (FAAS) and classical X-ray fluorescence analysis (XRFA). The determined values of all three methods correspond to a relative standard deviation (RSD) of only 6%.