A high power density and high efficiency UHF-band HFET for low voltage operation

A high power density and high efficiency AlGaAs-GaAs Heterostructure FET (HFET) for 0.9 GHz digital cellular phone systems has been successfully developed. The device has delivered a high power density of 117 mW/mm with a power-added efficiency (PAE) of 37.6% with a low adjacent channel power (ACP) of -53.4 dBc at a low drain bias of 3.3 V at 950 MHz operating frequency. >