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Sub-nanosecond threshold switching dynamics in GeSb 2 Te 4 phase change memory device
Sub-nanosecond threshold switching dynamics in GeSb 2 Te 4 phase change memory device
2019
Nishant Saxena
Anbarasu Manivannan
Keywords:
Physics
Analytical chemistry
Nanosecond
Optoelectronics
Phase-change memory
Non-volatile memory
GeSbTe
Correction
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