Ultrabroad-bandwidth and high-power superluminescent light emitting diodes

A unique design approach was proposed and applied to fabricate in a single chip ultra broad bandwidth and high power Superluminescent Emitting Diodes (SLEDs) at 820 nm, 1300 nm and 1550 nm windows. More than 2.5 mW, 20 mW, and 5mW of output power with a bandwidth of more than 50nm, 80 nm and 100 nm have been obtained for 820 nm, 1300 nm and 1550 nm wavelength windows, respectively. The devices were evaluated for optical coherence domain reflectometry (OCDR) and optical coherence tomography (OCT) applications, and coherence function data is quite good with a coherence measurement out to 10 mm with negligible artifacts.