Magnetoresistance of boron-doped chemical vapor deposition polycrystalline diamond films

Abstract The electrical properties and magnetoresistance of boron-doped polycrystalline diamond films grown on p-typed Si (100) by hot filament chemical vapor deposition have been investigated. As the atomic boron concentration increases from 3×10 17 to 3×10 19 cm −3 , and grain size from 5 to 15 μm, the quality of diamond is improved, which causes the carrier mobility μ and longitudinal magnetoresistance change rate Δρ // /ρ 0 to increase. For a magnetic field ( B ) of 20 tesla and temperature 300 K, the longitudinal resistance change rate Δρ // /ρ 0 is up to 20%. Meanwhile, Δρ // /ρ 0 is proportional to μ 2 B 2 in a low field and proportional to μ 1.5 B in a high field. It is the first time that a result is obtained in a high field.