Preparation and electrical properties of Sm-doped Bi2Ti2O7 thin films prepared on Pt (111) substrates

Abstract Crack-free Sm-doped Bi 2 Ti 2 O 7 (Sm:BTO) thin films with strong (111) orientation have been prepared on Pt (111) substrates using a chemical solution deposition (CSD) method. The structural properties and crystallizations were studied by X-ray diffraction. The surface morphology and quality were examined using atomic force microscopy (AFM). The insulating and dielectric properties were also evaluated at room temperature. The results demonstrate that the Sm:BTO films exhibit improved electrical performances as compared to the pure Bi 2 Ti 2 O 7 thin films and suggest a strong potential for utilization in microelectronics devices.