Rinse liquid to improve pattern collapse behavior

We designed and prepared a test mask to study a pattern collapse (PC) and investigated a rinse dependency. We report the effect of surfactant and solvent in rinse. The collapse behavior was quantified in terms of the first collapsed critical dimension (FCCD) in 90nm L/S ArF resist patterns. In-house rinse liquids (SE series) showed relatively lower surface tension (ST) compared to commercial one. They greatly reduced pattern collapse behavior (PCB) of from FCCD 102nm to 85nm L/S using these solutions. However, SE-100 showed defect by bubble and the others show bad compatibility with photoresist. SES-100 is the only rinse liquid candidate in this experiment.