XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire

Víctor Jesús Gómez Hernández,Zarko Gacevic,Pavel Aseev,Paul E. D. Soto Rodriguez,Praveen Kumar,Enrique Calleja Pardo,Richard Nötzel,Miguel Angel Sánchez García

XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire

2014

Víctor Jesús Gómez Hernández
Zarko Gacevic
Pavel Aseev
Paul E. D. Soto Rodriguez
Praveen Kumar
Enrique Calleja Pardo
Richard Nötzel
Miguel Angel Sánchez García

The International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research. The IWN and the International Conference on Nitride Semiconductors (ICNS) are held in alternating years and cover similar subject areas.

Keywords:

Nanotechnology
Metallurgy
Semiconductor
Sapphire
Nitride
Materials science
nitride semiconductors
Engineering physics
subject areas

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