TiNx thin films for energy-saving application prepared by atmospheric pressure chemical vapor deposition

Abstract Non-stoichiometric titanium nitride (TiN x ) thin films were fabricated on glass substrates by atmospheric pressure chemical vapor deposition (APCVD) using titanium tetrachloride and NH 3 as precursors. The relationships between x of TiN x thin films and the structure, electrical and optical properties of films were investigated. The results showed that the crystalline property of over-stoichiometric films was better than that of sub-stoichiometric films. Electrical resistivity of films declined with increasing x from 0.83 to 1.25. Spectrophotometer curves of films demonstrated that the plasma wavelength ( λ p ) shifted from the near-infrared region to the visible region and the peak value of transmittance increased with increasing x . The TiN x thin film with x  = 1.25 had low sheet resistance of 5 Ω/sq, high average reflectivity of 95% in the mid-far infrared region, 53% average reflectivity in the near-infrared region, and low average reflectivity of 10% in the visible region, indicating it can be a promising candidate as energy-saving films combining the function of solar control and low emission.