GIMIC-O - A low cost non-epitaxial bipolar LSI technology suitable for application to TTL circuits

A bipolar technology has been developed which is directed toward low power LSI applications at a wafer processing cost below those of MOS technologies. The structure uses the basic concepts of the triple diffused technology which requires neither an epitaxial nor buried layer; however, ion implantation of both the collector and base provide parameter control not possible with triple diffusion. The use of an ion implanted self-isolated collector region which is lightly doped provides small size and low capacitance; this region is also used for the formation of Schottky diodes. Well controlled, ion implanted resistors can be fabricated in both the base (p-type - 600Ω/□) and collector (n-type -700Ω/□) and substrate PNP's with β ∼ 10 are also available. The transistors show a peak f T = 1GHz which makes them suitable even for high speed applications. At present the technology is finding extensive use in low power Schottky clamped TTL circuits where it meets all the standard circuit requirements for that family.