A method for manufacturing a capacitor device structure grave

A method of manufacturing a grave structural capacitor means, - is formed in which an at least one trench (32) having grave structure (30), - wherein in the region of the respective trench (32) an arrangement with a first electrode region (44), a second electrode region (48) and provided therebetween dielectric region (46) is formed in this order, - wherein at least lower wall regions (32b) and bottom portions (32a) of the respective trench (32) are lined with a portion of the first electrode portion (44) of the second electrode portion (48) and the Dielektrikumsbereichs (46), and - wherein said top wall portions (32c) of the respective trench (32) with an insulating region (50) are formed, - wherein the upper wall portions (32c) of the respective trench (32) from the material of the first electrode portion (44) of the Dielektrikumsbereichs (46) and the second electrode region (48) freed or released in such a way, - that the material of the upper wall portion (32c) of the trench (32) is exposed, - wherein the insulation area (50) by ...